Kioxia unveils MSA-CBA architecture for ultra-high-density 3D NAND flash memory
Summary
Kioxia has unveiled its MSA-CBA design for ultra-high-density 3D NAND flash memory, which utilizes copper direct bonding to stack multiple 218-layer cell array wafers onto a CMOS wafer, paving the way for over 1,000 layers of memory. This innovation addresses challenges such as cell current degradation and wafer warpage, which arise as the number of stacked layers increases, ultimately enhancing memory performance. The demand for such high-capacity flash memory is driven by the rapid growth of data due to generative AI. This new architecture was showcased at the 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits.
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Analysis
Kioxia: Kioxia is a Japanese semiconductor company focused on flash memory technology and storage solutions. In this news, Kioxia introduced its MSA-CBA architecture that stacks multiple cell array wafers onto a CMOS wafer using copper direct bonding to achieve higher density 3D NAND flash memory. The work addresses challenges in scaling beyond current limits for applications like generative AI data storage. Mitsuhiko Noda: Mitsuhiko Noda is a researcher at Kioxia and the lead author of the technical paper describing the MSA-CBA architecture. His work details the wafer-to-wafer bonding process and prototype demonstrations of QLC operation with high-temperature data retention in the new design. Presentation: The research on the MSA-CBA architecture was presented at the 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits. Market Driver: Generative AI is increasing demand for higher-capacity and higher-density 3D flash memory.
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